Mar 03, 2017 08:15 AM EST
Samsung is all set to unveil its upcoming Galaxy S8 and Galaxy S8 Plus at the end of this month. Both upcoming flagships have gone under thorough leak roundups and we are in the final stage of leaks just before when Samsung reveal the devices to the world.
A Samsung Galaxy S8+ powered by an MSM8998 Snapdragon 835 SoC has been spotted on Geekbench sporting the model number SM-G955U. The device spotted on Geekbench has 4GB of RAM and is running latest OS Android 7.0 Nougat.
However, the Qualcomm Snapdragon 835 SoC is yet to launch commercially on consumer devices this year and other than Sony, no other company has officially claimed to use the said SoC. Moreover, Samsung is expected to offer the upcoming phone duo in two variants, one with the Snapdragon 835 and other with a new Exynos 9 series chip. Rumors also suggest that the upcoming Snapdragon 835 from Samsung will be made using 10nm FinFET technology and will have 27% performance increase over the last chip from Samsung. The power draw is also said to go down by 40%, according to Digit.
The Samsung Galaxy S8+ prototype managed to score 6084 points in the Geekbench multi-core test and 1929 points in the single-core test. Both scores are higher than what the Exynos 8890- and Snapdragon 820-powered Galaxy S7 Edge versions score. However, the gap between the Galaxy S7 Edge and the Galaxy S8+ is not as wide as we would have expected, as reported by vr-zone.
The multi-core performance, in particular, is impressive for the Galaxy S8+. In the single-core test, Apple's A10 chip rules supreme, as usual, according to GSM Arena.
The Samsung Galaxy S8+, along with the Galaxy S8, will be going official at an unpacked event that will be held in New York City on the 29th of this month. In the most markets around the world, both flagships will go on sale by the middle of April.
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